Email: sdsouza@ee.ucla.edu       Research Interests : Mixed Signal Circuit Design, 60 GHz radio, Signal Processing, System modeling for analog circuit design       Research Interests : Sandeep D'Souza was born in Bombay, India. He received his B.Tech from IIT Bombay in 1995 and M.S. from Purdue University in 1997, both in Electrical Engineering. Sandeep is currenly pursuing his Ph.D. in Electrical Engineering at UCLA under the supervision of Professor M-C. Frank Chang. His current research interests include high speed analog and mixed signal circuit design (such as design of DAC and continuous time filters), 60 GHz radio, Signal Processing and System modeling for analog circuit design. From July 1997 to March 2005, he was a Senior Staff Engineer with Conexant Systems Inc. in Newport Beach, CA working on Mixed Signal / RF device modeling and Technology for communications IC design. From June 2005 to September 2005, he was an advanced design intern with Intel Corporation in Hillsboro, OR where he worked on mixed signal circuit design for DDR3 I/O in 45nm CMOS. From January 2006 to March 2009, he was an RFIC Staff Design Engineer with Skyworks Solutions Inc. in Irvine, CA where he worked on dual mode 3G WCDMA / EDGE transceiver design. He is a Senior Member of the IEEE. Publications T. Sowlati, S. D’Souza et al, “Single-Chip Multi-Band WCDMA / HSDPA / HSUPA / EGPRS Transceiver with Diversity Receiver and 3G DigRF Interface without SAW filters in Transmitter / 3G Receiver paths,” IEEE ISSCC 2009 S. Martin, G.P. Li, H. Guan and S. D’Souza, “A BSIM3 based flat-band voltage pertubation model for RTS and 1/f noise,” IEEE Electron Device Lett., vol. 21, pp. 30-33, 2000. S. D’Souza, L-M. Hwang, M. Matloubian, S. Martin, P. Sherman, A. Joshi, H. Wu, S. Bhattacharya, and P. Kempf, “1/f noise characterization of deep sub-micron dual thickness nitrided gate oxide n- and p- MOSFETs, ” IEDM Tech. Dig., 1999, p. 839. S. Martin, G.P. Li, H. Guan, S. D’Souza, M. Matloubian, G. Claudius, and C. Compton, “BSIM3 based RTS and 1/f noise models suitable for circuit simulators,” IEDM Tech. Dig., 1998, p. 85 S. L. D’Souza, M. R. Melloch, M. S. Lundstrom, and E. S. Harmon, “Technique for measurement of the minority carrier mobility with a bipolar junction transistor,” Appl. Phys. Lett., Vol. 70 (1997), No. 70, pp. 475-477 Patents Patent Pending 'Programmable Transmit Continuous Time transmit Filter to Minimize Current Consumption of Low Noise, High Linearity, Wideband for dual mode WCDMA and GMSK, EDGE transceivers' U.S. Patent 6,514,825: Technique for reducing 1/f noise in MOSFETs U.S. Patent 6,653,679: Reduced 1/f noise in MOSFETs